About Future-Fab
Download New Issue
Contact Us
Volume Archives
Editorial Panel


Wednesday, August 27, 2014

New Article

Extending ArF Immersion Through Scanner Performance and Computational Lithography

Contributed by Nikon Precision

IC manufacturing technology continues to advance rapidly to meet next-generation requirements. Although integration of EUV lithography has been further delayed due to complex infrastructure issues, the past year has been marked with tremendous innovations in 193 nm scanner technology. Extension of ArF immersion lithography is imperative for chipmakers to maintain their roadmaps, with enhanced tool performance and flexible computational lithography solutions equally critical in extending 193 nm capabilities.

Download PDF

July 2013 Issue:

Future Visions & Current Concerns

About every 10 years, the semiconductor industry reinvents itself in order to make progress. In this issue of Future Fab International, you will find two significant examples of this innovation process.

Browse the entire Table of Contents
Download the new issue now

New Technologies & Device Structures

As Future Fab wraps up a distinguished run of service to the international semiconductor community, I would like to take this opportunity to thank my colleagues for offering concise, timely and relevant technology updates and contributions through this publication. Like the phoenix, I trust that new publication opportunities will arise from these ashes that will be well positioned to catch and ride the next tidal waves of emerging technologies.

Browse the entire Table of Contents
Download the new issue now

Chip Architecture & Integration

For nearly 50 years, Moore’s Law has reliably predicted the doubling of transistors on an integrated circuit every two years. However, in recent years, whispers that “Moore’s Law is dead” abound, as keeping on the technology treadmill bumps up against the limits of physics, economic viability, and the very nature of the application space for semiconductors in a post-PC world.

Browse the entire Table of Contents
Download the new issue now

Lithography Landscape

In this edition of Future Fab, Yayi Wei and David Cho of GLOBALFOUNDRIES examine the conundrum facing lithographers seeking patterning solutions for the 10 nm node, as the technical and cost challenges of extending 1.35NA 193 nm immersion patterning become more daunting.

Browse the entire Table of Contents
Download the new issue now

Metrology, Inspection & Failure Analysis

Amid the continued advances of 3D interconnect technology, related improvements in the associated metrology have become ever-more critical.

Browse the entire Table of Contents
Download the new issue now


193nm Resists: A Status Report – (Part Two)
In 1999 the ITRS roadmap proposed to roll out 130nm ground rule fabrication in 2002 with resolution enhanced KrF lithography or wavelength-shortened ArF lithography. The 2001 edition of the ITRS pushed the 130nm target to 2001. This acceleration puts even more pressure on the technology requirements. While the KrF technology is matured, ArF lithography still requires optimization even without resolution enhancement. This paper will focus on the ArF resist requirements. Selected critical issues, like line edge roughness and linearity, are reviewed.
Future Fab Intl.Volume 13, 7/8/2002


Published By:
?¡Àcheap #167
38 Miller Ave.
Mill Valley, CA 94941
Disclaimer | Privacy Policy