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January Edition - AVAILABLE NOW! |
We are pleased to be able to bring you our annual special ITRS Focus issue. Put together in close collaboration with the International Technology Roadmap for Semiconductors (ITRS), we present to you rewrites for each of the Technology Working Groups (TWGs), including the newest TWG, MEMS. Once again the issue starts out with a special introduction from the chair of the ITRS, one of our longest-standing editorial board members, Dr. Paolo Gargini.
Wishing you a successful 2012!
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In this issue:
Special Introduction
Please find the 2011 latest edition of the fully revised ITRS as it is regularly published on every odd year. Since the 2011 ITRS is a dynamic document, you will find many exciting new ideas and improvements as compared with the 2009 ITRS version.
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Future Visions & Current Concerns
The Environment, Safety and Health (ESH) Chapter is unique in the ITRS Roadmap. While the Roadmap is by intent a technology-focused document, the ESH section must necessarily also address policy and regulatory issues. This was first explicitly recognized in the 2009 Roadmap, and is further extended in the 2011 ESH Chapter.
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New Technologies & Device Structures
Transitions within the ITRS could fundamentally impact its scope and approaches to high-volume nanomanufacturing.
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Design Implementation & Process Integration
One characteristic of a roadmap is that, while ever advancing, its “depth of field” remains essentially constant. Thanks to persistent research investments, items that were previously fuzzy come into clear focus, new items requiring focus emerge (with some blur), and completed items drop off behind us. This premise is amply demonstrated by the two papers in this section.
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Manufacturing: Fab, Systems & Software
The empirical law known as Moore’s Law, in the medium- and long-term vision, is a common and key reference in the semiconductor field. The important role of our professionals is to pay attention to today’s challenges but also to emerging trends and the implications for the future of innovation.
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Front End of Line
2011 was another year of excitement with relevant progress in new memories, III-V integration, FinFET moving in production, FDSOI showing great performance and additional functionalities like multiple Vt and dynamic Vt control.
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Back End of Line
The ITRS Interconnect Group recognizes that copper and low-k dielectric will remain in use over the approaching 15-year horizon. However, scaling of RC due to Cu/low-k has been minimal due to the complexity of integrating ULK materials and the increasing resistivity of shrinking Cu lines.
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Metrology, Inspection & Failure Analysis
Process control and yield management are critical functions of semiconductor manufacturing that continue to rely on metrology, inspection and failure analysis. Shrinking device dimensions and the introduction of new materials and device structures continue to bring new challenges to overcome.
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Assembly, Test & Packaging Technologies
This edition of Future Fab presents two articles that discuss the International Technology Roadmap Semiconductors (ITRS) 2011 publication and outline the related packaging and testing sections.
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Comparison of Deposition Temperature Measurement Methods for HDPCVD and PECVD Silicon Dioxide Films
High density plasma (HDP) and plasma
enhanced chemical vapor deposition
(PECVD) are widely used techniques in
semiconductor integrated circuit (IC)
manufacturing to obtain un-doped silica
glass (USG) thin films, especially to form
inter-metal dielectric (IMD) stacks, even
into 90nm semiconductor technology
node. Thin films from PECVD and
HDPCVD can be deposited with a range of
temperature between 300 to 750°C,
according to their different applications
inside the integration process flow.
Temperature is an important parameter
to be kept under control to attain repeatable
deposited thin films and avoid circuit
defects such as metal bus hillock formations,
dielectric cracks and low-k material
de-cohesion.
So it becomes crucial to use different,
complementary and indirect measurement
methods to maintain controlled
temperature during reaction and, consequently,
film chemical-physical characteristics:
TiAl3 alloy formation method, [Si-
OH] bond concentration by Fourier transform
infrared spectroscopy, wet etch rate
(WER) and in situ pyrometer or thermocouple
readings.
Future Fab Intl.Volume 21, 7/1/2006
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